Application of the singular valve decomposition–Prony method for analyzing deep- level transient spectroscopy capacitance transients
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چکیده
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Electrically active defects due to end-of-ion-range damage in silicon irradiated with MeV Ar+ ions
Damage induced by MeV Ar+ ion implantation and end of range defects in Si have been studied by capacitance-voltage, thermally stimulated capacitance, deep level transient spectroscopy (DLTS) and time analyzed transient spectroscopy (TATS). Unlike earlier studies, which focus on defects induced during post-implantation annealing steps, we study asimplanted p-type silicon samples. We report the o...
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